IPP45P03P4L11AKSA1

Rochester Electronics
In Stock: 21,662

Can ship immediately

Pricing:
  • 1$0.57
  • 10$0.50378
  • 100$0.39801
  • 500$0.30867
  • 1,000$0.24369

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Technical Details

  • Series:OptiMOS™
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:11.1mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id:2V @ 85µA

 

  • Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
  • Vgs (Max):+5V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds:3.77 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):58W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3-1
  • Package / Case:TO-220-3

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