NDBA100N10BT4H

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V, 15V
• Rds On (Max) @ Id, Vgs:6.9mOhm @ 50A, 15V
• Vgs(th) (Max) @ Id:4V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2.95 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):110W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D²PAK (TO-263)
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB