TK1R4S04PB,LXHQ

Technical Details

• Series:U-MOSIX-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:120A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:1.9mOhm @ 60A, 6V
• Vgs(th) (Max) @ Id:3V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:103 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):180W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK+
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63