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Technical Details

  • Series:-
  • Package:Bag
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Drive Voltage (Max Rds On, Min Rds On):5V
  • Rds On (Max) @ Id, Vgs:120mOhm @ 10A, 5V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 5 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
  • FET Feature:Logic Level Gate, 4V Drive
  • Power Dissipation (Max):105W (Tc)
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

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