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Technical Details

  • Series:Z-FET™
  • Package:Tube
  • Part Status:Not For New Designs
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:196mOhm @ 10A, 20V
  • Vgs(th) (Max) @ Id:2.5V @ 500µA

 

  • Gate Charge (Qg) (Max) @ Vgs:32.6 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:527 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3

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