G3R160MT17J

GeneSiC Semiconductor
In Stock: 635

Can ship immediately

Pricing:
  • 1$12.6

Quote It

Technical Details

  • Series:G3R™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1700 V
  • Current - Continuous Drain (Id) @ 25°C:22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:208mOhm @ 12A, 15V
  • Vgs(th) (Max) @ Id:2.7V @ 5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:51 nC @ 15 V
  • Vgs (Max):±15V
  • Input Capacitance (Ciss) (Max) @ Vds:1272 pF @ 1000 V
  • FET Feature:-
  • Power Dissipation (Max):187W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263-7
  • Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Related Products


R6042JNZ4C13

MOSFET N-CH 600V 42A TO247G

  • 1: $12.79000

3N206

N-CHANNEL POWER MOSFET

  • 1: $12.80000

IPW65R041CFDFKSA2

MOSFET N-CH 650V 68.5A TO247-3

  • 1: $12.86000
  • 240: $10.80819

SIHG039N60EF-GE3

MOSFET N-CH 600V 61A TO247AC

  • 1: $13.04000

NTE2387

MOSFET N-CHANNEL 800V 4.1A TO220

  • 1: $13.07000

NTE2394

MOSFET N-CHANNEL 500V 14A TO3P

  • 1: $13.10000

IPWS65R050CFD7AXKSA1

MOSFET N-CH 650V 45A TO247-3-41

  • 1: $13.38000

SCTWA20N120

IC POWER MOSFET 1200V HIP247

  • 1: $13.42000
  • 600: $9.26550

IXTH10N100D2

MOSFET N-CH 1000V 10A TO247

IXTH10N100D2 Datasheet
  • 1: $13.59000
  • 30: $11.29381

IPW65R050CFD7AXKSA1

MOSFET N-CH 650V 45A TO247-3-41

  • 1: $13.65000

Top