RT1C060UNTR
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 6A 8TSST
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RT1C060UNTR Datasheet
-
ECAD Model
- Share
In Stock: 2,753
Can ship immediately
Pricing:
- 1$0.46
- 3,000$0.15211
- 6,000$0.14229
- 15,000$0.13739
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:28mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
- Vgs (Max):±10V
- Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):650mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-TSST
- Package / Case:8-SMD, Flat Lead
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