RQ3G100GNTB

ROHM Semiconductor
In Stock: 2,328

Can ship immediately

Pricing:
  • 1$0.49
  • 3,000$0.16483

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:14.3mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:8.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:615 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-HSMT (3.2x3)
  • Package / Case:8-PowerVDFN

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