RS1E200GNTB
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 30V 20A 8HSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RS1E200GNTB Datasheet
-
ECAD Model
- Share
In Stock: 2,339
Can ship immediately
Pricing:
- 1$0.77
- 2,500$0.28214
- 5,000$0.27241
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:16.8 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):3W (Ta), 25.1W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-HSOP
- Package / Case:8-PowerTDFN
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