SI3493BDV-T1-GE3

Vishay / Siliconix
In Stock: 1,388

Can ship immediately

Pricing:
  • 1$0.87
  • 3,000$0.37293
  • 6,000$0.34873
  • 15,000$0.33663
  • 30,000$0.33003

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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:27.5mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:43.5 nC @ 5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:1805 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):2.08W (Ta), 2.97W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-TSOP
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

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