SI4850BDY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 8.4A/11.3A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI4850BDY-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 2,262
Can ship immediately
Pricing:
- 1$1.03
- 2,500$0.48373
- 5,000$0.46101
- 12,500$0.44479
- 25,000$0.44243
Quote It
Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 11.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:19.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:790 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 4.5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
Related Products
MOSFET N-CHANNEL 60V 25A D2PAK
- 1: $1.04000
- 1000: $0.57960
MOSFET N-CH 60V 16A/104A PDFN56U
- 1: $2.19000
