SIDR638DP-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 100A PPAK SO-8DC
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIDR638DP-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 3,017
Can ship immediately
Pricing:
- 1$2.18
- 3,000$1.10406
- 6,000$1.06574
Quote It
Technical Details
- Series:TrenchFET® Gen IV
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:0.88mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:204 nC @ 10 V
- Vgs (Max):+20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds:10500 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® SO-8DC
- Package / Case:PowerPAK® SO-8
Related Products
MOSFET N-CH 30V 60A/400A 8DFN
- 1: $2.21000
MOSFET N-CH 100V 60A TO263
- 1: $2.21000
