STH110N10F7-2

STMicroelectronics
In Stock: 174

Can ship immediately

Pricing:
  • 1$3.11
  • 1,000$1.70825
  • 2,000$1.60298
  • 5,000$1.55034

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Technical Details

  • Series:DeepGATE™, STripFET™ VII
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:6.5mOhm @ 55A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5117 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):150W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:H2Pak-2
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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