TP65H480G4JSG-TR

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:3.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):8V
• Rds On (Max) @ Id, Vgs:560mOhm @ 3.4A, 8V
• Vgs(th) (Max) @ Id:2.8V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:8 V @ 8 nC
• Vgs (Max):±18V
• Input Capacitance (Ciss) (Max) @ Vds:400 V @ 760 pF
• FET Feature:-
• Power Dissipation (Max):13.2W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:3-PQFN (5x6)
• Package / Case:3-SMD, Flat Lead