TPH3208LDG
Transphorm
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionGANFET N-CH 650V 20A 3PQFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPH3208LDG Datasheet
-
ECAD Model
- Share
In Stock: 483
Can ship immediately
Pricing:
- 1$10.81
- 10$9.729
- 60$8.8642
- 120$7.9994
- 300$7.3508
- 540$6.7022
- 1,020$6.0536
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id:2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs:14 nC @ 8 V
- Vgs (Max):±18V
- Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):96W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:3-PQFN (8x8)
- Package / Case:3-PowerDFN
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