SCTH90N65G2V-7

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):18V
• Rds On (Max) @ Id, Vgs:26mOhm @ 50A, 18V
• Vgs(th) (Max) @ Id:5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:157 nC @ 18 V
• Vgs (Max):+22V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:3300 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):330W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:H2PAK-7
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA