IPL65R1K0C6SATMA1

Rochester Electronics
In Stock: 4,460

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Pricing:
  • 1$0.49
  • 5,000$0.49

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Technical Details

  • Series:CoolMOS™ C6
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 150µA

 

  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):34.7W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:Thin-PAK (5x6)
  • Package / Case:8-PowerTDFN

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