IRFHM9331TRPBF

Technical Details

• Series:HEXFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:11A (Ta), 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V, 20V
• Rds On (Max) @ Id, Vgs:10mOhm @ 11A, 20V
• Vgs(th) (Max) @ Id:2.4V @ 25µA

• Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:1543 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.8W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PQFN (3x3)
• Package / Case:8-PowerTDFN