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Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.98mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 100µA

 

  • Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5.171 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):163W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:I-PAK
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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