BSC018NE2LSATMA1

IR (Infineon Technologies)
In Stock: 1,155

Can ship immediately

Pricing:
  • 1$1.27
  • 5,000$0.59014

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Technical Details

  • Series:OptiMOS™
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.8mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):2.5W (Ta), 69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TDSON-8-1
  • Package / Case:8-PowerTDFN

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