NTMFS5C604NLT1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTMFS5C604NLT1G Datasheet
-
ECAD Model
- Share
In Stock: 3,502
Can ship immediately
Pricing:
- 1$1.61
- 1,500$1.61
- 3,000$1.5295
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:1.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:8.9 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.9W (Ta), 200W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:5-DFN (5x6) (8-SOFL)
- Package / Case:8-PowerTDFN, 5 Leads
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