IPZ65R095C7XKSA1

Rochester Electronics
In Stock: 27,522

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Pricing:
  • 1$3.22
  • 240$3.22

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Technical Details

  • Series:CoolMOS™ C7
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:95mOhm @ 11.8A, 10V
  • Vgs(th) (Max) @ Id:4V @ 590µA

 

  • Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2.14 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):128W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO247-4
  • Package / Case:TO-247-4

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