IPI200N25N3GAKSA1

Rochester Electronics
In Stock: 35,524

Can ship immediately

Pricing:
  • 1$3.62
  • 500$3.62

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Technical Details

  • Series:OptiMOS™
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 64A, 10V
  • Vgs(th) (Max) @ Id:4V @ 270µA

 

  • Gate Charge (Qg) (Max) @ Vgs:86 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:7.1 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO262-3
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA

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