IPT029N08N5ATMA1

IR (Infineon Technologies)
In Stock: 1,925

Can ship immediately

Pricing:
  • 1$4.87
  • 2,000$2.44568

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Technical Details

  • Series:OptiMOS™ 5
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):80 V
  • Current - Continuous Drain (Id) @ 25°C:52A (Ta), 169A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:2.9mOhm @ 150A, 10V
  • Vgs(th) (Max) @ Id:3.8V @ 108µA

 

  • Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 40 V
  • FET Feature:-
  • Power Dissipation (Max):168W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-HSOF-8
  • Package / Case:8-PowerSFN

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