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Technical Details

  • Series:SD211
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:50mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 25V
  • Rds On (Max) @ Id, Vgs:45Ohm @ 1mA, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 1µA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):+25V, -300mV
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):300mW (Ta)
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-72-4
  • Package / Case:TO-206AF, TO-72-4 Metal Can

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