UF3SC065040D8S
UnitedSiC
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSICFET N-CH 650V 18A 4DFN
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 2,614
Can ship immediately
Pricing:
- 1$12.7
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):12V
- Rds On (Max) @ Id, Vgs:58mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id:6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs:43 nC @ 12 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):125W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:4-DFN (8x8)
- Package / Case:4-PowerTSFN
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