CSD18504KCS

Texas Instruments
In Stock: 756

Can ship immediately

Pricing:
  • 1$1.6
  • 10$1.41486
  • 50$1.28
  • 100$1.12297
  • 500$0.87584
  • 1,000$0.69618
  • 2,500$0.65126

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Technical Details

  • Series:NexFET™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:53A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id:2.3V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):115W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

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