IPA086N10N3GXKSA1

IR (Infineon Technologies)
In Stock: 300

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Technical Details

  • Series:OptiMOS™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Rds On (Max) @ Id, Vgs:8.6mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 75µA

 

  • Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3980 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):37.5W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-FP
  • Package / Case:TO-220-3 Full Pack

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