In Stock: 812

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Pricing:
  • 1$2
  • 25$1.66082
  • 100$1.51347

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:640mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:900mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 10mA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:450 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):740mW (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92-3
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

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