IRF5210LPBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 100V 38A TO262
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF5210LPBF Datasheet
-
ECAD Model
- Share
In Stock: 1,041
Can ship immediately
Pricing:
- 1$2.52
- 10$2.28995
- 100$1.86586
- 500$1.48082
- 1,000$1.24977
Quote It
Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:60mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2780 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.1W (Ta), 170W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
MOSFET N-CH 60V 200A TO220-3
- 1: $2.52000
- 400: $1.41670
MOSFET N-CH 40V 100A TO220-3
- 1: $2.53000
- 10: $2.28488
- 50: $2.04446
