IPA65R1K0CEXKSA1

IR (Infineon Technologies)
In Stock: 493

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Technical Details

  • Series:CoolMOS™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:7.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id:3.5V @ 200µA

 

  • Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
  • FET Feature:Super Junction
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220 Full Pack
  • Package / Case:TO-220-3 Full Pack

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