In Stock: 1,056

Can ship immediately

Pricing:
  • 1$1.8
  • 10$1.62904
  • 100$1.32805
  • 500$1.05396
  • 1,000$0.88952

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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Not For New Designs
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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