IPP12CN10LGXKSA1

IR (Infineon Technologies)
In Stock: 560

Can ship immediately

Pricing:
  • 1$1.85
  • 10$1.67072
  • 100$1.34268
  • 500$1.04433
  • 1,000$0.86531

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Technical Details

  • Series:OptiMOS™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:69A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:12mOhm @ 69A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 83µA

 

  • Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3
  • Package / Case:TO-220-3

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