IPP114N12N3GXKSA1

IR (Infineon Technologies)
In Stock: 485

Can ship immediately

Pricing:
  • 1$2.1
  • 10$1.89861
  • 100$1.52577
  • 500$1.18674
  • 1,000$0.9833

Quote It

Technical Details

  • Series:OptiMOS™
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):120 V
  • Current - Continuous Drain (Id) @ 25°C:75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11.4mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 83µA

 

  • Gate Charge (Qg) (Max) @ Vgs:65 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 60 V
  • FET Feature:-
  • Power Dissipation (Max):136W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO220-3
  • Package / Case:TO-220-3

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