SIHA6N80E-GE3

Vishay / Siliconix
In Stock: 1,145

Can ship immediately

Pricing:
  • 1$2.63
  • 10$2.37462
  • 100$1.90799
  • 500$1.48397
  • 1,000$1.22958
  • 2,500$1.14477
  • 5,000$1.10238

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Technical Details

  • Series:E
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:940mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:827 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):31W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220 Full Pack
  • Package / Case:TO-220-3 Full Pack

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