R8002ANX
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 2A TO220FM
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet R8002ANX Datasheet
-
ECAD Model
- Share
In Stock: 634
Can ship immediately
Pricing:
- 1$2.99
- 10$2.6899
- 100$2.16207
- 500$1.77635
- 1,000$1.47183
- 2,500$1.42108
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.3Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:12.7 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:210 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):35W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220FM
- Package / Case:TO-220-3 Full Pack
