NTE222

Technical Details

• Series:-
• Package:Bag
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:50mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:-
• Vgs(th) (Max) @ Id:4V @ 20µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-
• Input Capacitance (Ciss) (Max) @ Vds:3.3 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):360mW (Ta), 1.2mW (Tc)
• Operating Temperature:-65°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-72
• Package / Case:TO-206AF, TO-72-4 Metal Can