PMXB360ENEAZ
Nexperia
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 80V 1.1A DFN1010D-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet PMXB360ENEAZ Datasheet
-
ECAD Model
- Share
In Stock: 443
Can ship immediately
Pricing:
- 1$0.33
- 5,000$0.12708
- 10,000$0.11993
- 25,000$0.11135
- 50,000$0.10777
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:450mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id:2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:4.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 40 V
- FET Feature:-
- Power Dissipation (Max):400mW (Ta), 6.25W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DFN1010D-3
- Package / Case:3-XDFN Exposed Pad
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