STB4NK60Z-1
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 4A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STB4NK60Z-1 Datasheet
-
ECAD Model
- Share
In Stock: 166
Can ship immediately
Pricing:
- 1$0.91
- 50$0.73365
- 100$0.66027
- 500$0.51353
- 1,000$0.4255
- 2,500$0.39615
- 5,000$0.38148
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Technical Details
- Series:SuperMESH™
- Package:Tube
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):70W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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