TSM4NB65CI C0G
TSC (Taiwan Semiconductor)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 4A ITO220AB
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TSM4NB65CI C0G Datasheet
-
ECAD Model
- Share
In Stock: 1,080
Can ship immediately
Pricing:
- 1$0.98
- 10$0.86343
- 100$0.68259
- 500$0.5294
- 1,000$0.41795
- 3,000$0.39008
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.37Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:13.46 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:549 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):70W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:ITO-220AB
- Package / Case:TO-220-3 Full Pack, Isolated Tab
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