R6509KNJTL

ROHM Semiconductor
In Stock: 227

Can ship immediately

Pricing:
  • 1$3.1

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Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:585mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id:5V @ 230µA

 

  • Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:540 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):94W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:LPTS
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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