FCPF650N80Z

Rochester Electronics
In Stock: 810

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Pricing:
  • 1$0.91
  • 1,000$0.91

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Technical Details

  • Series:SuperFET® II
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:650mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 800µA

 

  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1.565 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):30.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F
  • Package / Case:TO-220-3 Full Pack

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