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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:50mA
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:300Ohm @ 100µA, 20V
  • Vgs(th) (Max) @ Id:5V @ 10µA

 

  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-6.5V
  • Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):375mW
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-72-4
  • Package / Case:TO-206AF, TO-72-4 Metal Can

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