FDC658P
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 30V 4A SUPERSOT6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDC658P Datasheet
-
ECAD Model
- Share
In Stock: 252
Can ship immediately
Pricing:
- 1$0.6
- 3,000$0.2434
- 6,000$0.2277
- 15,000$0.212
- 30,000$0.201
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Technical Details
- Series:PowerTrench®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):30 V
- Current - Continuous Drain (Id) @ 25°C:4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:50mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 15 V
- FET Feature:-
- Power Dissipation (Max):1.6W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SuperSOT™-6
- Package / Case:SOT-23-6 Thin, TSOT-23-6
