2SJ652-1E

ON Semiconductor
In Stock: 126

Can ship immediately

Pricing:
  • 1$2.22
  • 50$1.78662
  • 100$1.60799
  • 500$1.25064
  • 1,000$1.03624

Quote It

Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:28A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:38mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:-

 

  • Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 30W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3SG
  • Package / Case:TO-220-3 Full Pack

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