BBL4001-1E

ON Semiconductor
In Stock: 182

Can ship immediately

Pricing:
  • 1$3.14
  • 50$2.53446
  • 100$2.28107
  • 500$1.77416
  • 1,000$1.47002

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Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:74A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:6.1mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id:2.6V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta), 35W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3 Fullpack/TO-220F-3SG
  • Package / Case:TO-220-3 Full Pack

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