SIHD2N80E-GE3

Vishay / Siliconix
In Stock: 172

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Pricing:
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Technical Details

  • Series:E
  • Package:Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:2.75Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:19.6 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):62.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-PAK (TO-252AA)
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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