RM4P20ES6

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:3A (Ta), 4.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:52mOhm @ 4.1A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 4 V
• FET Feature:-
• Power Dissipation (Max):1.7W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-6
• Package / Case:SOT-23-6