RD3L03BATTL1

ROHM Semiconductor
In Stock: 130

Can ship immediately

Pricing:
  • 1$1.36

Quote It

Technical Details

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:35A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:41mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1930 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):56W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products


RM110N85T2

MOSFET N-CH 85V 110A TO220-3

  • 1: $0.58000

RM150N60T2

MOSFET N-CH 60V 150A TO220-3

  • 1: $0.58000

RM7N600LD

MOSFET N-CHANNEL 600V 7A TO252-2

  • 1: $0.58000

IRL2203NPBF-INF

HEXFET POWER MOSFET

  • 1: $0.58000

SQJ211ELP-T1_GE3

MOSFET P-CH 100V 33.6A PPAK SO-8

  • 1: $1.38000

IPP60R600E6

N-CHANNEL POWER MOSFET

  • 1: $0.59000

RJK03M0DPA-WS#J5A

N-CHANNEL POWER MOSFET

  • 1: $0.59000

IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1

  • 1: $1.24000

SISS78LDN-T1-GE3

MOSFET N-CH 70V 19.4A/66.7A PPAK

  • 1: $1.40000

SISS76LDN-T1-GE3

MOSFET N-CH 70V 19.6A/67.4A PPAK

  • 1: $1.40000

Top