SIHFR9120-GE3

Technical Details

• Series:-
• Package:Tube
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:5.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:600mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 42W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D-PAK (TO-252AA)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63